This article is cited in 1 paper

Electronic and optical properties of semiconductors

The nature of edge luminescence of CdTe:Mg diffusion layers

V. P. Makhniy, V. V. Kosolovskiy, M. M. Slyotov, M. V. Skrypnyk, A. M. Slyotov

Chernivtsi National University named after Yuriy Fedkovych

Abstract: The effect of the isovalent Mg impurity on the luminescence of CdTe is studied. Diffusion doping allows fabrication of CdTe:Mg layers that show efficient edge luminescence. The emission is attributed to interband electron-hole recombination and annihilation of excitons bound at the isovalent Mg impurity.

Received: 14.01.2010
Accepted: 26.01.2010

 English version: Semiconductors, 2010, 44:9, 1167–1169

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