Electronic and optical properties of semiconductors

Influence of defects formed by fast reactor neutrons on exciton luminescence spectra of cadmium sulfide single crystals

G. E. Davydyuk^a, N. S. Bogdanyuk^a, V. V. Bozhko^a, A. H. Kevshyn^a, V. S. Manzhara^b, V. Kazhukauskas<sup>c

a</sup> Volyn University of Lesya Ukrainka, Lutsk
^b Institute of Physics, National Academy of Sciences of Ukraine, Kiev
^c Institute of Applied Research and Vilnius University (Department of Semiconductor Physics), 10222, Vilnius, Lithuania

Abstract: The influence of clusters of defects formed by irradiation with neutrons in CdS single crystals on parameters of the spectra of exciton photoluminescence at $T\approx$ 4.2 K has been studied. It is experimentally established that irradiation of the samples with fast reactor neutrons with energies $E\approx$1 MeV and dose $\Phi$ = 3 $\times$ 10$^{18}$ cm$^{-2}$ brings about a decrease (by approximately 50 times) in the intensity of lines of exciton photoluminescence $I_1$ ($\lambda_m$ = 488.7 nm), $I_2$ ($\lambda_m$ = 486.9 nm), and $I_3$ ($\lambda_m$ = 486.3 nm) with redistribution of intensities in favor of the lines $I_1$ and $I_3$ and an increase in their half-width from 2 to 5–6 the positions of their peaks in the emission spectrum. Observed experimental facts are explained on the basis of a model of a two-phase system composed of slightly damaged region in the CdS single crystal in which clusters of defects (formed as a result of irradiation with neutrons) are embedded; these clusters are nanosized grains with a highly disordered structure.

Received: 15.02.2010
Accepted: 24.02.2010

 English version: Semiconductors, 2010, 44:9, 1153–1157

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