Electronic and optical properties of semiconductors

The variance law and scattering mechanism of charge carriers in Zn-doped $p$-In$_{0.5}$Ga$_{0.5}$Sb

S. A. Zeynalov, F. F. Aliev, S. Z. Damirova, B. A. Tairov

Institute of Physics Azerbaijan Academy of Sciences

Abstract: Temperature dependences of the electrical conductivity, Hall coefficient, and thermoelectric power of Zn-doped alloys of the equimolar composition In$_{0.5}$Ga$_{0.5}$Sb are studied. The concentration and temperature dependences of the effective mass of holes are determined. It is shown that, for all doped samples at $T <$ 200 K, the charge carriers are scattered by impurity ions and, at $T >$ 200 K, scattering by lattice vibrations also introduces a substantial contribution.

Received: 13.01.2010
Accepted: 17.02.2010

 English version: Semiconductors, 2010, 44:9, 1149–1152

Bibliographic databases:

•