This article is cited in 17 papers

Electronic and optical properties of semiconductors

Negative magnetoresistance in silicon with manganese-atom complexes [Mn]$_4$

M. K. Bakhadyrkhanov, K. S. Ayupov, G. Kh. Mavlonov, S. B. Isamov

Tashkent State Technical University named after Islam Karimov

Abstract: It is experimentally shown that an anomalously high negative magnetoresistance is observed in silicon with manganese-atom complexes [Mn]$_4$ at room temperature. It is established that the negative magnetoresistance has the largest value at $T$ = 230–240 K, while its value decreases with temperature, and the inversion of the magnetoresistance sign takes place at $T <$ 170 K; i.e., the positive magnetoresistance is observed. It is established that the negative magnetoresistance and its temperature dependence are substantially affected by the intensity of both integrated and monochromatic light.

Received: 13.02.2010
Accepted: 17.02.2010

 English version: Semiconductors, 2010, 44:9, 1145–1148

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