This article is cited in 4 papers

Electronic and optical properties of semiconductors

Dislocation electrical conductivity of plastically deformed natural diamonds

S. N. Samsonenko, N. D. Samsonenko, V. I. Timchenko

Donbas National Academy of Civil Engineering and Architecture

Abstract: The temperature dependence of the electrical conductivity of natural semiconducting diamonds of Ic type has been studied. The activation energies of the dislocation acceptor centers (induced by plastic deformation) are found to be $\varepsilon_3$ = 0.29–0.36 eV. Four natural diamonds of IIa type with a resistivity of 10$^{15}$–10$^{16}$ $\Omega$ cm were plastically deformed to prove the formation of levels with the activation energy $\varepsilon_3$ in semiconducting diamonds. The deformation led to a decrease in resistivity by one to two orders of magnitude and to the formation of a new level with $\varepsilon_3$ = 0.29 eV, which is characteristic of semiconducting diamonds. We expect deformation to induce dislocation centers, not only in Ic-type diamonds, but also in natural semiconducting diamonds of IIb type.

Received: 17.02.2009
Accepted: 17.02.2010

 English version: Semiconductors, 2010, 44:9, 1140–1144

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