This article is cited in 8 papers

Electronic and optical properties of semiconductors

Differential method of analysis of luminescence spectra of semiconductors

A. M. Emel'yanov

Ioffe Institute, St. Petersburg

Abstract: A method for analyzing the luminescence spectra of semiconductors is suggested. The method is based on differentiation of the spectra. The potentialities of the method are demonstrated for luminescence in the region of the fundamental absorption edge of Si and SiGe alloy single crystals. The method is superior in accuracy to previously known luminescence methods of determining the band gap of indirect-gap semiconductors and practically insensitive to different conditions of outputting radiation from the sample.

Received: 08.02.2010
Accepted: 16.02.2010

 English version: Semiconductors, 2010, 44:9, 1134–1139

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