This article is cited in 1 paper

Atomic structure and non-electronic properties of semiconductors

Analysis of the phase diagrams of the CdS–CdSe–CdTe system

V. A. Kuznetcov

Saratov State Agrarian University named after N. I. Vavilov

Abstract: A technique for determining the depth of band gap sagging and the mechanism of this effect (related to the deformation potential, which may arise in the range of existence of mixed alloy systems) has been proposed based on analysis of the energy diagrams of II–VI semiconductor compounds. Choosing a proper composition of a binary or ternary system, one can increase its photosensitivity in a specified spectral range due to the band gap sagging.

Received: 28.12.2009
Accepted: 26.01.2010

 English version: Semiconductors, 2010, 44:9, 1117–1120

Bibliographic databases:

•