P. V. Seredin, A. V. Glotov, È. P. Domashevskaya, I. N. Arsent'ev, D. A. Vinokurov, A. L. Stankevich, I. S. Tarasov, “Relaxation of crystal lattice parameters and structural ordering in In$_x$Ga$_{1-x}$As epitaxial alloys”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 8,Pages 1140

This article is cited in 8 papers

Manufacturing, processing, testing of materials and structures

Relaxation of crystal lattice parameters and structural ordering in In$_x$Ga$_{1-x}$As epitaxial alloys

P. V. Seredin^a, A. V. Glotov^a, È. P. Domashevskaya^a, I. N. Arsent'ev^b, D. A. Vinokurov^b, A. L. Stankevich, I. S. Tarasov^b

^a Voronezh State University
^b Ioffe Institute, St. Petersburg

Abstract: Epitaxial In$_x$Ga$_{1-x}$As/GaAs(100) heterostructures grown by the MOC-hydride method with a considerable lattice mismatch are studied by X-ray diffraction and scanning electron microscopy. The relaxation coefficient of the crystal lattice of the epitaxial alloy is calculated and the deformation energy is evaluated. It is shown that, at a concentration of the In atoms in metal sublattice close to $x$ = 0.5, the superstructural phase formed on the surface of the epitaxial In$_x$Ga$_{1-x}$As alloy is the InGaAs$_2$ compound with a layered tetragonal crystal lattice and ordered arrangement of the atoms of the metal sublattice in the growth plane of the epitaxial film.

Received: 15.12.2009
Accepted: 21.12.2009