This article is cited in 1 paper

Manufacturing, processing, testing of materials and structures

Structural and electrical properties of SiGe-on-insulator substrates fabricated by direct bonding

I. V. Grekhov^a, L. S. Kostina^a, T. S. Argunova^ab, E. I. Belyakova^a, A. V. Rozhkov^a, N. M. Shmidt^a, Sh. A. Yusupova^a, J. H. Je<sup>b

a</sup> Ioffe Institute, St. Petersburg
^b Pohang University of Science and Technology, Pohang, 790-784, Republic of Korea

Abstract: A new method for fabricating SiGe-on-insulator substrates, i.e., direct bonding of thermally oxidized Si wafers with Si$_{1-x}$Ge$_x$ wafers cut from Czochralski-grown crystals, is suggested. Si$_{1-x}$Ge$_x$ layers no larger than 10 $\mu$m thick in SiGe/SiO$_2$/Si compositions were fabricated by chemical mechanical polishing. To increase the Ge content in the Si$_{1-x}$Ge$_x$ layer, thermal oxidation was used. It was shown that the increase in the Ge content and heat treatment procedures at 1250$^\circ$C are not accompanied by degradation of structural and electrical characteristics of Si$_{1-x}$Ge$_x$ layers.

Received: 02.02.2010
Accepted: 12.02.2010

 English version: Semiconductors, 2010, 44:8, 1101–1105

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