This article is cited in 7 papers

Semiconductor physics

Interference effects in the electroreflectance and electroluminescence spectra of InGaN/AlGaN/GaN light-emitting-diode heterostructures

L. P. Avakyants^a, P. Yu. Bokov^a, A. V. Chervyakov^a, A. V. Chuyas^a, A. I. Yunovich^a, E. D. Vasil'eva^b, D. A. Bauman^b, V. V. Uelin, B. S. Yavich<sup>b

a</sup> Lomonosov Moscow State University, Faculty of Physics
^b Svetlana Optoelectronics ZAO, St. Petersburg

Abstract: Interference effects in InGaN/AlGaN/GaN light-emitting-diode heterostructures of blue emission are studied by spectroscopy of electroreflectance and electroluminescence. The periodic bands observed in the electroreflectance and electroluminescence spectra in a blue spectral range are caused by interference effects in the structure in general. The emergence of interference fringes in the electroreflection spectra is explained by modulation of built-in electric fields in the active region of the heterostructure. The long-period interference fringes observed in the electroreflectance spectra in a wide spectral range from infrared to ultra-violet allows one to determine the location of the active region of the heterostructure with respect to different reflecting surfaces in the cavity.

Received: 13.01.2010
Accepted: 18.01.2010

 English version: Semiconductors, 2010, 44:8, 1090–1095

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