Abstract:
The formation of thin high- and low-resistivity layers in the space-charge region of Cu$_{1.8}$S–CdS and Cu$_{1.8}$S–ZnS surface-barrier photoconverter structures leads to a considerable increase in photosensitivity and a reduction in the dark tunneling-recombination currents. Highly efficient and stable ultraviolet photoconverters based on CdS and ZnS were obtained, and their electrical and photoelectrical properties were studied. The main operational parameters of the photoconverters are reported.
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