This article is cited in 25 papers

Low-dimensional systems

Raman studies of silicon nanocrystals embedded in silicon suboxide layers

N. E. Maslova^a, A. A. Antonovsky^a, D. M. Zhigunov^a, V. Yu. Timoshenko^a, V. N. Glebov^b, V. N. Seminogov<sup>b

a</sup> Lomonosov Moscow State University, Faculty of Physics
^b Department of Advanced Laser Technologies ILIT – branch ILIT in Troitsk

Abstract: Raman spectroscopy is used for the study of SiO$_x$ ($x\approx$ 1) layers subjected to thermal annealing at the temperatures from 950 to 1200$^\circ$C to form Si nanocrystals inside the layers. From comparison of the experimental data with the model of spatial confinement of phonons, the volume fractions of the crystalline and amorphous Si phases in the layers are determined. It is established that, as the annealing temperature is increased, the average dimensions of Si nanocrystals increase from 4 to 6.5 nm. This is attributed to the coarsening of nanocrystals due to crystallization of the amorphous Si phase and to the processes of coalescence of neighboring nanocrystals at the highest temperatures of annealing.

Received: 16.12.2009
Accepted: 21.12.2009

 English version: Semiconductors, 2010, 44:8, 1040–1043

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