This article is cited in 24 papers

Low-dimensional systems

Effect of spacer layers on current-voltage characteristics of resonant-tunneling diode

M. A. Remnev, I. Yu. Kateev, V. F. Elesin

Moscow Engineering Physics Institute (State University)

Abstract: Using the numerical solution to the Schrödinger equation, current-voltage characteristics of the resonant-tunneling diode with spacer layers were obtained. The dependences of the peak current of the resonant-tunneling diode on the emitter spacer width were plotted. It was shown that the peak current depends periodically on the emitter spacer width. The constructed electron density diagrams showed that the increase in the peak current is associated with the resonant level in the emitter spacer region.

Received: 23.06.2009
Accepted: 01.12.2009

 English version: Semiconductors, 2010, 44:8, 1034–1039

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