This article is cited in 2 papers

Semiconductor structures, interfaces and surfaces

Metal-insulator-semiconductor barriers with a nanometer-thick aluminum nitride insulator on $p$-type silicon

A. M. Ivanov^a, I. M. Kotina^b, M. S. Lasakov^b, N. B. Strokan^a, L. M. Tuhkonen<sup>b

a</sup> Ioffe Institute, St. Petersburg
^b The Petersburg Nuclear Physics Institute, The National Research Center "Kurchatov Institute"

Abstract: The state of the interface between $p$-silicon and a nanometer-thick insulator is analyzed. DLTS spectra, obtained with deep centers in the bulk of the structure and its surface states recharged, are examined. The nature of the noise as a function of the reverse bias is determined for evaluating the possibility of using the structure as a nuclear radiation detector. A conclusion is drawn that the barrier used in the structure has a higher quality when nanometer-thick aluminum nitride films are deposited by dc, rather than ac, magnetron sputtering.

Received: 02.02.2010
Accepted: 10.02.2010

 English version: Semiconductors, 2010, 44:8, 1030–1033

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