This article is cited in 3 papers

Semiconductor structures, interfaces and surfaces

Development and photoelectric properties of In/$p$-Ag$_3$AsS$_3$ surface-barrier structures

V. Yu. Rud'^a, Yu. V. Rud'^b, E. I. Terukov<sup>b

a</sup> St. Petersburg Polytechnic University
^b Ioffe Institute, St. Petersburg

Abstract: Homogeneous $p$-Ag$_3$AsS$_3$ bulk single crystals with rhombic structure have been grown by planar crystallization from melts with atomic composition corresponding to this ternary compound. Photosensitive surface-barrier structures based on the interface between the surface of these crystals and thin films of pure indium are fabricated for the first time. The photosensitivity of fabricated structures is studied in natural and linearly polarized light. Photosensitivity spectra of In/$p$-Ag$_3$AsS$_3$ structures are measured for the first time and used to determine the nature and energy of interband transitions in $p$-Ag$_3$AsS$_3$ crystals. The phenomenon of natural photopleochroism is studied for surface-barrier structures grown on oriented $p$-Ag$_3$AsS$_3$ single crystals. It is concluded that Ag$_3$AsS$_3$ single crystals can be used in photoconverters of natural and linearly polarized light.

Received: 21.01.2010
Accepted: 02.02.2010

 English version: Semiconductors, 2010, 44:8, 1025–1029

Bibliographic databases:

•