This article is cited in 1 paper

Semiconductor structures, interfaces and surfaces

Capacitance-voltage characteristics of the electrolyte-$n$-InN surface and electron states at the interface

M. È. Rudinskii, A. A. Gutkin, P. N. Brunkov

Ioffe Institute, St. Petersburg

Abstract: Dependences of differential capacitance of the system degenerate $n$-InN-electrolyte on the voltage are measured at a frequency of the probing voltage of 300 Hz. Qualitative analysis of these characteristics is performed based on a one-dimensional model of the metal-insulator-semiconductor structure in the region of bias voltages near the flat-band voltage and depletion. It is shown that the magnitude of capacitance in this voltage region is affected by electron states at the interface. The density and energy distribution of these states are evaluated. The form of the voltage dependence of capacitance in the region of accumulation also indicates the existence of the states at the interface, the energy of which exceeds the energy of the conduction band bottom by several tenths of eV. The density of these states increases as the energy increases.

Received: 30.12.2009
Accepted: 13.01.2010

 English version: Semiconductors, 2010, 44:8, 1020–1024

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