This article is cited in 1 paper

Semiconductor structures, interfaces and surfaces

Optical properties of thin GaSe/$n$-Si(111) films

M. P. Kisselyuk^a, A. I. Vlasenko^a, P. A. Gentsar^a, N. V. Vuychik^a, N. S. Zayats^a, I. V. Kruglenko^a, O. S. Litvin^a, Ts. A. Kryskov<sup>b

a</sup> Institute of Semiconductor Physics NAS, Kiev
^b Kamyanets-Podilsky Ivan Ohienko National University

Abstract: Morphological and optical studies (ellipsometry and reflectance spectroscopy in the ranges 400–750 nm and 1.4–25 $\mu$m) of thin GaSe films fabricated by thermal evaporation on the $n$-Si (111) single-crystal substrates are reported. The film thickness was 15–60 nm. It is established that, in the initial stage of growth, the growth of GaSe on the $n$-Si (111) substrates occurs via formation of islands (three-dimensional growth). It is shown that, as the thickness increases, the physical parameters of the film change and the films approach single crystals in crystalline and energy band structure. For films with a thickness of 60 nm, the reflectance band peak is attributed to indirect optical transitions enhanced by reflection from the film-substrate interface. From the results of optical studies, quantum effects in the surface region of the thin films are conjectured.

Received: 30.07.2009
Accepted: 17.02.2010

 English version: Semiconductors, 2010, 44:8, 1012–1015

Bibliographic databases:

•