This article is cited in 2 papers

Electronic and optical properties of semiconductors

Statistical method of deep-level transient spectroscopy in semiconductors

E. A. Tatokhin^a, A. V. Kadantsev^a, A. E. Bormontov^b, V. G. Zadorozhniy<sup>b

a</sup> Voronezh State Technological Academy
^b Voronezh State University

Abstract: The method of transient spectroscopy is one of the basic methods widely used for determining the parameters of defects, which are the origin of deep levels in the semiconductor-material band gap. With the purpose of increasing the accuracy of determining the concentration and deep-level parameters describing the character of the isothermal capacitance relaxation, a statistical method of processing the results of its measurements based on the statistical solution-search algorithm is proposed.

Received: 09.12.2009
Accepted: 18.01.2010

 English version: Semiconductors, 2010, 44:8, 997–1003

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