Electronic and optical properties of semiconductors

Study of main HgMnZnTe band parameters

S. E. Ostapov, V. M. Frasunyak, V. V. Zhikharevich

Chernivtsi National University named after Yuriy Fedkovych

Abstract: The results of an theoretical and experimental study of main band parameters of multicomponent HgMnZnTe alloys are presented. Empirical formulas are suggested for calculating the band gap and intrinsic carrier concentration in the parabolic approximation in wide temperature and composition ranges. The results of the theoretical study are in good agreement with experimental and published data.

Received: 30.11.2009
Accepted: 22.12.2009

 English version: Semiconductors, 2010, 44:8, 993–996

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