This article is cited in 2 papers

Atomic structure and non-electronic properties of semiconductors

Two-electron tin centers arising in glassy chalcogenides of arsenic due to nuclear reactions

G. A. Bordovskii^a, P. V. Gladkikh^a, M. Yu. Kozhokar^a, A. V. Marchenko^a, P. P. Seregin^a, E. I. Terukov<sup>b

a</sup> Herzen State Pedagogical University of Russia, St. Petersburg
^b Ioffe Institute, St. Petersburg

Abstract: Impurity $^{119m}$Sn atoms arising as a result of radioactive decay of parent $^{119mm}$Sn atoms in the structure of the glasses As$_2$S$_3$, As$_2$Se$_3$, and As$_2$Te$_3$ are part of the glass composition in the form of structural units corresponding to tetravalent tin. The impurity $^{119m}$Sn atoms formed as a result of radioactive decay of $^{119}$Sb atoms in the structure of the As$_2$S$_3$ and As$_2$Se$_3$ glasses are localized at the arsenic sites and play the role of two-electron centers with a negative correlation energy. For the As$_2$Te$_3$ glass, similarly formed $^{119m}$Sn atoms are electrically inactive. The greatest part of the daughter $^{119m}$Sn atoms arising after radioactive decay of parent $^{119m}$Te atoms are located at the chalcogen sites and are electrically inactive in the As$_2$S$_3$, As$_2$Se$_3$, and As$_2$Te$_3$ glasses. A significant recoil energy of daughter atoms in the case of the $^{119m}$Te radioactive decay brings about the appearance of the $^{119m}$Sn displaced atoms.

Received: 20.01.2010
Accepted: 27.01.2010

 English version: Semiconductors, 2010, 44:8, 978–982

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