This article is cited in 5 papers

Atomic structure and non-electronic properties of semiconductors

A study of the process of decomposition of supersaturated GaAs:Fe solid solution by scanning probe microscopy

S. S. Khludkov^a, I. A. Prudaev^a, V. A. Novikov^b, O. P. Tolbanov^a, I. V. Ivonin<sup>b

a</sup> Siberian Physical-Technical Institute of the Tomsk State University
^b Tomsk State University

Abstract: Using an atomic-force microscope, the decomposition of the supersaturated solid solution of iron-doped GaAs (GaAs:Fe) is studied. GaAs:Fe samples were obtained in the course of high-temperature diffusion of Fe into GaAs and subsequent annealing at a temperature by 200$^\circ$C below the doping temperature. The measurements are performed for transverse cleavages along the cleavage planes of the GaAs:Fe wafers. It is shown that, during annealing of the GaAs:Fe samples, the supersaturated alloy decomposes with the formation of particles of the second phase from $\sim$50 nm to $\sim$1 $\mu$m in size. The particles of the second phase possess ferromagnetic properties at room temperature.

Received: 30.12.2009
Accepted: 18.01.2010

 English version: Semiconductors, 2010, 44:8, 975–977

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