This article is cited in 13 papers

Manufacturing, processing, testing of materials and structures

MBE growth and characterization of 5-$\mu$m quantum-cascade lasers

V. V. Mamutin^a, V. M. Ustinov^a, J. Boetthcher^b, Н. Kuenzel<sup>b

a</sup> Ioffe Institute, St. Petersburg
^b Fraunhofer Institut Nachrichtentechnik, Heinrich Hertz Institut, 10587 Berlin, Deutschland

Abstract: Quantum-cascade lasers, which are obtained by molecular-beam epitaxy, emit at wavelengths of 5.0 $\mu$m at 77 K and 5.2 $\mu$m at 300 K and are based on a design with four quantum wells in the active region with vertical transitions and strain-compensated superlattices with high-efficiency injection and a short lifetime of the ground state are fabricated. The typical thresholds for lasing at 300 K were in the range 4–10 kA/cm$^2$. The maximum emission power was as high as $\sim$1 W, the maximum lasing temperature was $\sim$450 K, and the maximum characteristic temperature $T_0\approx$ 200 K. The use of a modified process of postgrowth treatment made it possible to reproducibly obtain high-quality devices.

Received: 22.12.2009
Accepted: 28.12.2009

 English version: Semiconductors, 2010, 44:7, 962–968

Bibliographic databases:

•