S. O. Usov, E. E. Zavarin, A. F. Tsatsul'nikov, V. V. Lundin, A. V. Sakharov, A. E. Nikolaev, M. A. Sinicin, N. V. Kryzhanovskaya, S. I. Troshkov, N. N. Ledentsov, “Structural and optical properties of InAlN/GaN distributed Bragg reflectors”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 7,Pages <nobr>981

This article is cited in 3 papers

Manufacturing, processing, testing of materials and structures

Structural and optical properties of InAlN/GaN distributed Bragg reflectors

S. O. Usov^ab, E. E. Zavarin^ab, A. F. Tsatsul'nikov^ab, V. V. Lundin^ab, A. V. Sakharov^ab, A. E. Nikolaev^ab, M. A. Sinicin^ac, N. V. Kryzhanovskaya^a, S. I. Troshkov^a, N. N. Ledentsov^a

^a Ioffe Institute, St. Petersburg
^b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
^c Saint Petersburg Physics and Technology Centre for Research and Education

Abstract: Structural and optical properties of InAlN/GaN distributed Bragg reflectors grown by MOCVD on sapphire substrates are studied. The influence of growth conditions and thicknesses of the InAlN layers on structural properties of distributed Bragg reflectors is studied. It is shown that optimization of the conditions of epitaxial growth makes it possible to design InAlN/GaN distributed Bragg reflectors with a reflectance of more than 99% and a reflection maximum in the wavelength range of 460–610 nm.

Received: 14.11.2009
Accepted: 27.11.2009