This article is cited in 9 papers

Manufacturing, processing, testing of materials and structures

Growth of (InSb)$_{1-x}$(Sn$_2$)$_x$ films on GaAs substrates by liquid-phase epitaxy

A. S. Saidov^a, M. S. Saidov^a, Sh. N. Usmonov^a, U. P. Asatova<sup>b

a</sup> Physical-Technical Institute, Uzbekistan Academy of Sciences
^b Urgench State University named after Abu Rayhan Biruni

Abstract: The possibility of growing single-crystal substitutional (InSb)$_{1-x}$(Sn$_2$)$_x$ alloy (0 $\le x\le$ 0.05) on the GaAs substrate by liquid-phase epitaxy from the In solution melt is established. The X-ray diffraction patterns and spectral and current-voltage characteristics of obtained $n$-GaAs-$p$-(InSb)$_{1-x}$(Sn$_2$)$_x$ heterostructures are studied at different temperatures. The lattice parameters of the (InSb)$_{1-x}$(Sn$_2$)$_x$ alloy are determined. It is found that the forward portion of the current-voltage characteristic of such structures at low voltages (up to 0.7 V) is described by the exponential dependence $I=I_0\exp(qV/ckT)$, and at high voltages ($V >$ 0.9 V), there is a portion of sublinear increase in the current with the voltage $V\approx V_0\exp(Jad)$. The experimental results are interpreted based on the injection depletion theory. It is shown that the product of mobility of majority carriers by the concentration of deep-level impurities increases as the temperature increases.

Received: 28.07.2009
Accepted: 30.11.2009

 English version: Semiconductors, 2010, 44:7, 938–945

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