V. S. Sizov, A. F. Tsatsul'nikov, A. V. Sakharov, V. V. Lundin, E. E. Zavarin, N. A. Cherkashin, M. J. Hÿtch, A. E. Nikolaev, A. M. Mintairov, Yan He, J. L. Merz, “The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 7,Pages <nobr>955

This article is cited in 10 papers

Semiconductor physics

The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes

V. S. Sizov^ab, A. F. Tsatsul'nikov^ab, A. V. Sakharov^ab, V. V. Lundin^ab, E. E. Zavarin^ab, N. A. Cherkashin^ac, M. J. Hÿtch^c, A. E. Nikolaev^ab, A. M. Mintairov^d, Yan He^d, J. L. Merz^d

^a Ioffe Institute, St. Petersburg
^b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
^c Center for Material Elaboration & Structural Studies (CEMES) of the National Center for Scientific Research (CNRS), 31055 Toulouse, France
^d EE Department, University of Notre Dame, Notre Dame, IN, 46556 (USA)

Abstract: Optical and light-emitting diode structures with an active InGaN region containing short-period InGaN/GaN superlattices are studied. It is shown that short-period superlattices are thin two-dimensional layers with a relatively low In content that contain inclusions with a high In content 1–3 nm thick. Inclusions manifest themselves from the point of view of optical properties as a nonuniform array of quantum dots involved in a residual quantum well. The use of short-period superlattices in light-emitting diode structures allows one to decrease the concentration of nonradiative centers, as well as to increase the injection of carriers in the active region due to an increase in the effective height of the AlGaN barrier, which in general leads to an increase in the quantum efficiency of light-emitting diodes.

Received: 24.11.2009
Accepted: 30.11.2009