This article is cited in 5 papers

Semiconductor physics

Double pulse doped InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor heterostructures

A. Yu. Egorov, A. G. Gladyshev, E. V. Nikitina, D. V. Denisov, N. K. Polyakov, E. V. Pirogov, A. A. Gorbatsevich

Saint Petersburg Physics and Technology Centre for Research and Education

Abstract: Double pulse doped ($\delta$-doped) InGaAs/AlGaAs/GaAs pseudomorphic high-electron-mobility transistor (HEMT) heterostructures were grown by molecular-beam epitaxy using a multiwafer technological system. The room-temperature electron mobility was determined by the Hall method as 6550 and 6000 cm$^2$/(V s) at sheet electron densities of 3.00 $\times$ 10$^{12}$ и 3.36 $\times$ 10$^{12}$ cm$^{-2}$, respectively. HEMT heterostructures fabricated in a single process feature high uniformity of structural and electrical characteristics over the entire area of wafers 76.2 mm in diameter and high reproducibility of characteristics from process to process.

Received: 23.11.2009
Accepted: 27.11.2009

 English version: Semiconductors, 2010, 44:7, 919–923

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