This article is cited in 9 papers

Low-dimensional systems

Study of defects in heterostructures with GaPAsN and GaPN quantum wells in the GaP matrix

O. I. Rumyantsev^ab, P. N. Brunkov^ab, E. V. Pirogov^ab, A. Yu. Egorov<sup>ab

a</sup> Saint Petersburg Physics and Technology Centre for Research and Education
^b Ioffe Institute, St. Petersburg

Abstract: Heterostructures with GaP/GaP$_{1-x}$N$_x$ and GaP/GaP$_{1-x-y}$As$_x$N$_y$ quantum wells grown by the MOCVD method are studied by methods of capacitance-voltage profiling and capacitive and current deep level transient spectroscopy. In heterostructures with GaP/GaP$_{1-x}$N$_x$ quantum wells, intrinsic defects with deep levels of 0.17 and 0.08 eV are revealed. It is shown that a considerable decrease in the concentration of these defects occurs with the substitution of a ternary GaP$_{1-x}$N$_x$ alloy forming the region of the quantum well by a GaP$_{1-x-y}$As$_x$N$_y$ quaternary alloy. The nature of emerging defects and mechanisms of decreasing their concentration are discussed.

Received: 30.11.2009
Accepted: 14.12.2009

 English version: Semiconductors, 2010, 44:7, 893–897

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