This article is cited in 3 papers

Semiconductor structures, interfaces and surfaces

Features of conduction mechanisms in Si/oligo-$\beta$-naphthol/metal heterostructures

Sh. M. Gasanli^a, N. N. Mursakulov^a, U. F. Samedova^a, N. N. Abdulzade^a, B. A. Mamedov^a, R. K. Guseynov<sup>b

a</sup> Institute of Physics Azerbaijan Academy of Sciences
^b Ganja State University

Abstract: Conduction mechanisms in Si-polymer-metal heterostructures with oligo-$\beta$-naphthol as a wide band-gap polymer have been studied. The results obtained are explained within the models of hopping transport via trap levels, Schottky emission, and field tunneling emission. Different charge transport mechanisms operate in different temperature ranges and under different electric fields.

Received: 15.09.2009
Accepted: 18.12.2009

 English version: Semiconductors, 2010, 44:7, 875–878

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