This article is cited in 1 paper

Semiconductor structures, interfaces and surfaces

Bistable low temperature (77 K) impurity breakdown in $p$-type 4H-SiC

P. A. Ivanov, A. S. Potapov, T. P. Samsonova

Ioffe Institute, St. Petersburg

Abstract: Low-temperature (77 K) forward current-voltage characteristics of 4H-SiC $p^+$–$p$–$n$–$n$ (substrate) mesa epitaxial diode structures have been measured. The characteristics are S-shaped, which is accounted for by the bistable nature of the impact ionization of frozen-out acceptor atoms of aluminum.

Received: 24.11.2009
Accepted: 30.11.2009

 English version: DOI: 10.1134/S1063782610070079

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