This article is cited in 2 papers

Electronic and optical properties of semiconductors

Calculation of the charge-carrier mobility in diamond at low temperatures

A. S. Baturin, V. N. Gorelkin, V. R. Soloviev, I. V. Chernousov

Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region

Abstract: The discrepancies between the quasi-elastic and inelastic approaches to the calculation of the electron and hole mobilities in diamond at low temperatures when the carrier scattering from acoustic phonons becomes significantly inelastic have been numerically estimated. The calculations showed that the mobility described by a close-to-equilibrium distribution function differs several times from that obtained within the quasi-elastic approach even at 20 K. The results obtained are important for interpreting the low-temperature electrical experiments on high-purity diamond single crystals.

Received: 10.11.2009
Accepted: 22.12.2009

 English version: Semiconductors, 2010, 44:7, 867–871

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