This article is cited in 3 papers

Electronic and optical properties of semiconductors

Dependence of photoluminescence spectra of epitaxial Pb$_{1-x}$Eu$_x$Te (0 $\le x\le$ 0.1) alloy layers on conditions of growth

D. A. Pashkeev^a, Yu. G. Selivanov^a, F. Felder^b, I. I. Zasavitskii<sup>a

a</sup> P. N. Lebedev Physical Institute, Russian Academy of Sciences, Moscow
^b Thin Film Physics Group, Laboratory for Solid State Physics, Swiss Federal Institute of Technology (ETH), CH-8005 Zürich, Switzerland

Abstract: The photoluminescence spectra of the Pb$_{1-x}$Eu$_x$Te (0 $\le x\le$ 0.1) alloy are studied at low temperatures. Epitaxial layers were grown by molecular-beam epitaxy at different temperatures. Along with the basic line corresponding to interband radiative recombination, additional emission lines are observed in the low-energy region of the spectra. Some nonuniformities are observed at the sample surface (within an area smaller than 1% of the total surface area). The concentration and size (1–10 $\mu$m) of the nonuniformities decrease with increasing temperature of growth. The additional emission lines are attributed to local nonuniformities in the layer. The dependence of the band gap of the Pb$_{1-x}$Eu$_x$Te (0 $\le x\le$ 0.1) alloy on the composition parameter x is determined at 77.4 K. The dependence is nonlinear and adequately described by the relation $E_g$[eV] = 0.213 + 4.8$x$ - 18.4$x^2$.

Received: 08.12.2009
Accepted: 14.12.2009

 English version: Semiconductors, 2010, 44:7, 861–866

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