This article is cited in 4 papers

Electronic and optical properties of semiconductors

Optical properties of quaternary GaN$_x$As$_y$P$_{1-x-y}$ semiconductor alloys

A. Yu. Egorov^ab, N. V. Kryzhanovskaya^ab, E. V. Pirogov^b, M. M. Pavlov<sup>c

a</sup> Saint Petersburg Physics and Technology Centre for Research and Education
^b Ioffe Institute, St. Petersburg
^c Peter the Great St. Petersburg Polytechnic University

Abstract: The optical properties of quaternary GaN$_x$As$_y$P$_{1-x-y}$ semiconductor alloys grown on a GaP (100) substrate surface are studied by photoluminescence spectroscopy in the temperature range 20–300 K and by photoluminescence excitation spectroscopy at liquid-nitrogen temperature. The measurements are carried out for the GaN$_x$As$_y$P$_{1-x-y}$ alloys, for which the nitrogen and arsenic molar fractions $x$ and $y$ range from 0.006 to 0.012 and from 0.00 to 0.18, respectively. A comparative analysis of the data is conducted, and the dependences of the energy position of the photoluminescence peak on the composition of the quaternary alloy are established. From the studies of photoluminescence in the range 20–300 K, it is found that the temperature dependence of the position of the photoluminescence peak substantially differs from the behavior described by Varshni’s expression.

Received: 07.12.2009
Accepted: 14.12.2009

 English version: Semiconductors, 2010, 44:7, 857–860

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