This article is cited in 4 papers

Electronic and optical properties of semiconductors

Photoinduced current transient spectroscopy of high-resistivity layered GaSe crystals

A. P. Odrinsky

Institute of Technical Acoustics, Academy of Sciences of Belarus, Vitebsk

Abstract: The defects in a high-resistivity $p$-GaSe single crystal are investigated by the method of photoinduced current transient spectroscopy. The results show the presence of traps corresponding to the gallium vacancy and extended defects. The traps with thermal-activation energies of 0.13, 0.39, and 0.53 eV are also detected. Their nature is discussed.

Received: 07.12.2009
Accepted: 14.12.2009

 English version: Semiconductors, 2010, 44:7, 854–856

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