This article is cited in 6 papers

Manufacturing, processing, testing of materials and structures

Optical and structural properties of InGaN/GaN short-period superlattices for the active region of light- emitting diodes

N. V. Kryzhanovskaya^abc, V. V. Lundin^ab, A. E. Nikolaev^ab, A. F. Tsatsul'nikov^ab, A. V. Sakharov^ab, M. M. Pavlov^b, N. A. Cherkashin^d, M. J. Hÿtch^d, G. A. Valkovskiy^a, M. A. Yagovkina^a, S. O. Usov<sup>b

a</sup> Ioffe Institute, St. Petersburg
^b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
^c Saint Petersburg Physics and Technology Centre for Research and Education
^d Center for Material Elaboration & Structural Studies of the National Center for Scientific Research, 31055 Toulouse, France

Abstract: The results of the study of structural and optical properties of short-period InGaN/GaN superlattices synthesized by MOCVD on sapphire substrates are presented. To form the superlattices, the method of periodic interruption of the growth of the InGaN layer with hydrogen supply into the reactor was used. It is shown that, with the use of the suggested method, an InGaN/GaN periodic structure with the developed interfaces and regions of joining the neighboring InGaN layers not correlated in a vertical direction is formed. The formation of such regions leads to a heavy dependence of the shape of the emission spectra of the super-lattices on the number of periods in the range of 400–470 nm.

Received: 17.11.2009
Accepted: 23.11.2009

 English version: Semiconductors, 2010, 44:6, 828–834

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