This article is cited in 7 papers

Manufacturing, processing, testing of materials and structures

Effect of annealing on the structure of Bi$_2$Te$_3$–Bi$_2$Se$_3$ films

N. M. Abdullaev, S. I. Mekhtieva, N. R. Memmedov, M. A. Ramazanov, A. M. Kerimova

Institute of Physics Azerbaijan Academy of Sciences

Abstract: The crystallization dynamics of Bi$_2$Te$_3$–Bi$_2$Se$_3$ polycrystalline films annealed at 200–230$^\circ$C has been investigated. The formation of ordered blocks 70–150 nm in size, depending on the annealing time and temperature, is observed.

Received: 11.11.2009
Accepted: 16.11.2009

 English version: Semiconductors, 2010, 44:6, 824–827

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