This article is cited in 5 papers

Manufacturing, processing, testing of materials and structures

Fabrication of heterostructures based on layered nanocrystalline silicon carbide polytypes

A. V. Semenov^a, A. V. Lopin^a, V. M. Puzikov^a, V. N. Baumer^a, I. N. Dmitruk<sup>b

a</sup> Institute for Single Crystals, National Academy of Sciences of Ukraine, Kharkov
^b Institute of Physics, National Academy of Sciences of Ukraine, Kiev

Abstract: The study demonstrates the possibility of forming heterostructures consisting of nanocrystalline SiC layers of the cubic $3C$ polytype (the lower layer on the substrate) and the rhombohedral $21R$ polytype (the upper layer) by direction deposition of nanocrystalline SiC layers onto a substrate subjected to gradient heating. The structure and order of arrangement of the SiC layers are analyzed in detail by X-ray diffraction studies, femtosecond photoluminescence measurements, and optical spectroscopy. The nature of the peaks observed in the photoluminescence, optical reflectance, and absorption spectra is discussed.

Received: 10.11.2009
Accepted: 16.11.2009

 English version: Semiconductors, 2010, 44:6, 816–823

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