This article is cited in 1 paper

Manufacturing, processing, testing of materials and structures

Magnetron-assisted deposition of thin (SiC)$_{1-x}$(AlN)$_x$ alloy films

M. K. Guseinov, M. K. Kurbanov, B. A. Bilalov, G. K. Safaraliev

Daghestan State Technical University

Abstract: The results of theoretical estimations of important parameters of the process of magnetron-assisted sputtering are reported. The parameters are the extent of the zone of thermalization of atoms and the distance from the target to the conditional anode. The method of magnetron-assisted sputtering of polycrys-talline SiC-AlN targets is applied to produce thin (SiC)$_{1-x}$(AlN)$_x$ alloy films on SiC and Al$_2$O$_3$ substrates. The structure and composition of the films are studied by X-ray diffraction measurements and electron microscopy. The factors that control the composition and structure of the films and the conditions of formation of the single-crystal (SiC)$_{1-x}$(AlN)$_x$ films on the SiC substrates are established.

Received: 27.04.2009
Accepted: 15.09.2009

 English version: Semiconductors, 2010, 44:6, 812–815

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