A. F. Tsatsul'nikov, V. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, N. V. Kryzhanovskaya, M. A. Sinicin, V. S. Sizov, A. L. Zakhgeim, M. N. Mizerov, “A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 6,Pages <nobr>837

This article is cited in 11 papers

Semiconductor physics

A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices

A. F. Tsatsul'nikov^ab, V. V. Lundin^ab, A. V. Sakharov^ab, E. E. Zavarin^ab, S. O. Usov^ab, A. E. Nikolaev^ab, N. V. Kryzhanovskaya^bc, M. A. Sinicin^bc, V. S. Sizov^ab, A. L. Zakhgeim^b, M. N. Mizerov^b

^a Ioffe Institute, St. Petersburg
^b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
^c Saint Petersburg Physics and Technology Centre for Research and Education

Abstract: A new approach to development of effective monolithic white-light emitters is described based on using a short-period InGaN/GaN superlattice as a barrier layer in the active region of LED structures between InGaN quantum wells emitting in the blue and yellow-green spectral ranges. The optical properties of structures of this kind have been studied, and it is demonstrated that the use of such a superlattice makes it possible to obtain effective emission from the active region.

Received: 17.11.2009
Accepted: 23.11.2009