This article is cited in 1 paper

Semiconductor physics

Two-band lasing in epitaxially stacked tunnel-junction semiconductor lasers

D. A. Vinokurov^a, M. A. Ladugin^b, A. V. Lyutetskiy^a, A. A. Marmalyuk^b, A. N. Petrunov^a, N. A. Pikhtin^a, S. O. Slipchenko^a, Z. N. Sokolova^a, A. L. Stankevich^a, N. V. Fetisova^a, I. S. Shashkin^a, N. S. Averkiev^a, I. S. Tarasov<sup>a

a</sup> Ioffe Institute, St. Petersburg
^b Polyus Research and Development Institute named after M. F. Stel'makh, Moscow

Abstract: Epitaxially stacked tunnel-junction laser hetero structures were grown by hydride metalorganic vapor-phase epitaxy in the system of AlGaAs/GaAs/In GaAs alloys. Based on such structures, mesa stripe lasers with an aperture of 150 s- 7 m were fabricated. The possibility of controlling the lasing wavelength by varying the active region thickness in each tunnel-junction laser structure was demonstrated. Independent two-band lasing at wavelengths of 914 and 925 nm (the difference frequency is 2.3 THz) was achieved at a maximum optical radiation power of 20 W in each band of the epitaxially stacked tunnel-junction semiconductor laser.

Received: 11.11.2009
Accepted: 16.11.2009

 English version: Semiconductors, 2010, 44:6, 805–807

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