This article is cited in 3 papers

Semiconductor physics

Pulsed semiconductor lasers with higher optical strength of cavity output mirrors

A. N. Petrunov^a, A. A. Podoskin^a, I. S. Shashkin^a, S. O. Slipchenko^ab, N. A. Pikhtin^ab, T. A. Nalet^ab, N. V. Fetisova^ab, L. S. Vavilova^ab, A. V. Lyutetskiy^ab, P. A. Alekseev^b, A. N. Titkov^b, I. S. Tarasov<sup>b

a</sup> Elfolum Ltd, St. Petersburg
^b Ioffe Institute, St. Petersburg

Abstract: Asymmetric heterostructures with an ultrathick waveguide based on an AlGaAs/GaAs alloy system that allow lasing at a wavelength of 905 nm have been developed and fabricated by hydride metalorganic vapor-phase epitaxy. The internal optical loss and internal quantum efficiency of semiconductor lasers based on such structures were 0.7 cm$^{-1}$ and 97%, respectively. It is shown that the highest output optical power of laser diodes with antireflecting (SiO$_2$) and reflecting (Si/SiO$_2$) coatings deposited on untreated Fabry–Perot cavity facets obtained by cleaving in an oxygen atmosphere reached 67 W in the pulsed mode and is limited by mirror damage. Treatment of Fabry–Perot cavity facets by etching in argon plasma and the formation of coatings with passivating and oxygen-blocking GaN and Si$_3$N$_4$ layers allowed an increase in the maximum output optical power to 120 W. Mirror damage was not observed at the attained output optical power.

Received: 14.10.2009
Accepted: 19.10.2009

 English version: Semiconductors, 2010, 44:6, 789–793

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