Abstract:
A combination of a high-dose (5 $\cdot$ 10$^{16}$ cm$^{-2}$) implantation of Al ions into epitaxial $n$-type 4H-SiC layers grown by chemical deposition from th e vapor phase and rapid (15 s) thermal annealing at 1700–1750$^\circ$C has been used to form layers with a rectangular impurity profile according to the mechanism of solid-phase epitaxial crystallization. The combined effects of enhanced diffusion of radiation defects after implantation and gettering of defects during annealing bring about an improvement in the quality of the initial material, which ensures an increase in the diffusion length of the minority charge carriers by several times. Metastable states annealed within different temperature ranges are formed in SiC under the effect of irradiation with various particles. Low-temperature annealing of radiation defects increases the radiation and temporal lifetime of devices under irradiation. High-temperature annealing of radiation defects makes it possible to vary the lifetime of nonequilibrium charge carriers, i.e, vary the frequency range of devices. The radiation resistance of SiC-based devices increases as the operation temperature is increased to 500$^\circ$C.
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