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Fizika i Tekhnika Poluprovodnikov, 2010 Volume 44, Issue 6, Pages 801–806 (Mi phts8845)

This article is cited in 1 paper

Semiconductor physics

Application of ITO/Al reflectors for increasing the efficiency of single-crystal silicon solar cells

V. R. Kopach, M. V. Kirichenko, G. S. Khrypunov, R. V. Zaitsev

Khar'kov Polytechnical University

Abstract: It is shown that an increase in the efficiency and manufacturability of single-junction single-crystal silicon photoelectric converters of solar energy requires the use of a back-surface reflector based on conductive transparent indium-tin oxide (ITO) 0.25–2 $\mu$m thick. To increase the efficiency and reduce the sensitivity to the angle of light incidence on the photoreceiving surface of multijunction photoelectric converters with vertical diode cells based on single-crystal silicon, ITO/Al reflectors with an ITO layer $>$ 1 $\mu$m thick along vertical boundaries of diode cells should be fabricated. The experimental study of multijunction photoelectric converters with ITO/Al reflectors at diode cell boundaries shows the necessity of modernizing the used technology of ITO layers to achieve their theoretically calculated thickness.

Received: 12.10.2009
Accepted: 19.10.2009


 English version:
Semiconductors, 2010, 44:6, 772–777

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