Abstract:
It is shown that an increase in the efficiency and manufacturability of single-junction single-crystal silicon photoelectric converters of solar energy requires the use of a back-surface reflector based on conductive transparent indium-tin oxide (ITO) 0.25–2 $\mu$m thick. To increase the efficiency and reduce the sensitivity to the angle of light incidence on the photoreceiving surface of multijunction photoelectric converters with vertical diode cells based on single-crystal silicon, ITO/Al reflectors with an ITO layer $>$ 1 $\mu$m thick along vertical boundaries of diode cells should be fabricated. The experimental study of multijunction photoelectric converters with ITO/Al reflectors at diode cell boundaries shows the necessity of modernizing the used technology of ITO layers to achieve their theoretically calculated thickness.