This article is cited in 5 papers

Semiconductor structures, interfaces and surfaces

Effect of microwave treatment on current flow mechanisms in Au–TiB$_x$–Al–Ti–$n^+$–$n$–$n^+$-GaN–Al$_2$O$_3$ ohmic contacts

A. E. Belyaev^a, N. S. Boltovets^b, S. A. Vitusevich^a, V. N. Ivanov^b, R. V. Konakova^a, Ya. Ya. Kudryk^a, A. A. Lebedev^c, V. V. Milenin^a, Yu. N. Sveshnikov^d, V. N. Sheremet<sup>a

a</sup> Institute of Semiconductor Physics NAS, Kiev
^b Orion State Research Institute, Kyiv
^c Ioffe Institute, St. Petersburg
^d JSC Elma-Malachit, Moscow, Zelenograd

Abstract: The temperature dependences of the contact resistivity $\rho_c$ of Au–TiB$_x$–Al–Ti–$n^+$–$n$–$n^+$-GaN–Al$_2$O$_3$ ohmic contacts have been studied before and after microwave treatment followed by nine-nonth room-temperature sample storage. The temperature dependences of $\rho_c$ of initial samples were measured twice. The first measurement showed the temperature dependence typical of ohmic contacts; the repeated measurement in the temperature region above 270 K showed a $\rho_c$ increase caused by metallic conductivity. After microwave treatment, the metallic conductivity in the ohmic contact is not observed. This is presumably associated with local heating of metal Ga inclusions under microwave irradiation and the formation, due to high chemical activity of liquid gallium, of compounds of it with other metallization components. In this case, the temperature dependence of $\rho_c$ is controlled by ordinary charge transport mechanisms. After nine-nonth room-temperature storage, the temperature dependence of $\rho_c$ is described by the tunneling mechanism of charge transport.

Received: 03.11.2009
Accepted: 12.11.2009

 English version: Semiconductors, 2010, 44:6, 745–751

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