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Fizika i Tekhnika Poluprovodnikov, 2010 Volume 44, Issue 6, Pages 753–758 (Mi phts8837)

This article is cited in 1 paper

Electronic and optical properties of semiconductors

Innovations in X-ray-induced electron emission spectroscopy (XIEES)

K. Yu. Pogrebickii, M. D. Sharkov

Ioffe Institute, St. Petersburg

Abstract: Currently, a pressing need has arisen for controlling the local atomic and electron structure of materials irrespective of their aggregate state. Efficient approaches to the studies of short-range order are based on phenomena accompanied by interference of secondary electrons excited by primary X-ray radiation. The set of such approaches are commonly referred to as the X-ray absorption fine structure (XAFS) methods. In reality, the XAFS methods are based on the use of synchrotron radiation and applied to structural studies in two modes of measurements, transmission analysis and recording of secondary effects. Only two such effects-specifically, the X-ray fluorescence and X-ray-induced electron emission effect–are commonly discussed. Access to synchrotron accelerators is problematic for most researchers, so a demand is created for designing laboratory systems that make direct access possible. Since the power of laboratory systems is much lower than that of synchrotrons, it is essential to use much more efficient detectors of secondary electrons. In addition, it is of interest to analyze energy characteristics with a high spatial resolution. Channel multipliers and multichannel boards are incapable of providing such a possibility. For this reason, an improved electron detector has been developed to analyze the photoemission effect in an accelerating field.

Received: 10.11.2009
Accepted: 16.11.2009


 English version:
Semiconductors, 2010, 44:6, 723–728

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