This article is cited in 3 papers

Electronic and optical properties of semiconductors

The effects of defects on electrical properties of Ag$_2$S at phase transition

F. F. Aliev, M. B. Dzhafarov, V. I. Eminova

Institute of Physics Azerbaijan Academy of Sciences

Abstract: The temperature dependences of electrical conductivity $\sigma(T)$ and the Hall coefficient $R(T)$ in Ag$_2$S at the phase transition have been studied. Qualitative discrepancies in the changes in $\sigma(T)$ and $R(T)$ in the case of phase transition have been revealed; i.e., $\sigma$ increases by several orders of magnitude while $R$ decreases by a factor of 3–4. This is interpreted in the context of a model with two types of charge carriers and with variation in the band parameters and the concentration of defects formed at the phase transition taken into account.

Received: 28.01.2009
Accepted: 13.11.2009

 English version: Semiconductors, 2010, 44:6, 719–722

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