L. V. Prokof'eva, Yu. I. Ravich, D. A. Pshenay-Severin, P. P. Konstantinov, A. A. Shabaldin, “Doping of IV–VI semiconductors and the energy spectrum of holes with resonance states taken into account”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 6,Pages <nobr>742

This article is cited in 6 papers

Electronic and optical properties of semiconductors

Doping of IV–VI semiconductors and the energy spectrum of holes with resonance states taken into account

L. V. Prokof'eva^a, Yu. I. Ravich^b, D. A. Pshenay-Severin^a, P. P. Konstantinov^a, A. A. Shabaldin^a

^a Ioffe Institute, St. Petersburg
^b Peter the Great St. Petersburg Polytechnic University

Abstract: Kinetic phenomena in the Pb$_{0.5}$Sn$_{0.5}$Te solid solution have been studied in wide ranges of concentrations and temperatures in the case of two types of acceptor doping: with overstoichiometric tellurium and with a combination of equal amounts of Na and Te atoms; in the latter case, two additives amounting to 1.0 and 1.5 at% of each element have been used. Hole densities attained in this case significantly exceeded the largest values corresponding to the Pb$_{0.5}$Sn$_{0.5}$Te:Te samples. For both types of acceptors, the hole concentration in the solid solution is found to be a factor of 2 higher than in PbTe with the same level of doping. The specific features of behavior of the Hall coefficient, thermopower, and electrical conductivity are interpreted in the context of a model of a single-valence-band spe ctrum with a wide band of resonant levels. The mechanism of formation of resonant levels in PbTe and Pb$_{0.5}$Sn$_{0.5}$Te solid solutions is discussed.

Received: 03.11.2009
Accepted: 12.11.2009