This article is cited in 8 papers

Manufacturing, processing, testing of materials and structures

Comparative study of changes in electrical properties of silicon and silicon carbide upon proton irradiation

V. V. Emtsev^a, A. M. Ivanov^a, V. V. Kozlovsky^b, A. A. Lebedev^a, G. A. Oganesyan^a, N. B. Strokan<sup>a

a</sup> Ioffe Institute, St. Petersburg
^b Peter the Great St. Petersburg Polytechnic University

Abstract: Rates of carrier removal from the conduction band in $n$-type FZ-Si and 4H-SiC irradiated with 8- and 15-MeV protons at room temperature are discussed. Calculated rates of formation of primary radiation defects (Frenkel pairs) in these materials are presented and compared with the corresponding experimental values. Protons create defects in collision cascades involving recoil atoms formed in the crystal lattice itself. The results are compared with similar data previously obtained in irradiation of $n$-type FZ-Si and 4H-SiC with 900-keV electrons, in which case isolated so-called close Frenkel pairs are absolutely dominant among primary radiation defects. It has been found that the $E$-center model adequately describing the decrease in the electrical conductivity of $n$-FZ-Si upon electron irradiation is inapplicable to interpretation of experimental data for proton-irradiated materials. It is suggested that a pronounced annealing of “simple” radiation defects of the type of close Frenkel pairs occurs during irradiation at room temperature.

Received: 22.04.2009
Accepted: 10.12.2009

 English version: Semiconductors, 2010, 44:5, 678–684

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