A. N. Semenov, Ya. V. Terent'ev, B. Ya. Mel'tser, V. A. Solov'ev, T. V. Popova, A. V. Nashchekin, I. A. Andreev, E. V. Kunitsyna, A. A. Usikova, Yu. P. Yakovlev, S. V. Ivanov, “Molecular beam epitaxy of thermodynamically metastable GaInAsSb alloys for medium IR-range photodetectors”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 5,Pages <nobr>699

This article is cited in 7 papers

Manufacturing, processing, testing of materials and structures

Molecular beam epitaxy of thermodynamically metastable GaInAsSb alloys for medium IR-range photodetectors

A. N. Semenov, Ya. V. Terent'ev, B. Ya. Mel'tser, V. A. Solov'ev, T. V. Popova, A. V. Nashchekin, I. A. Andreev, E. V. Kunitsyna, A. A. Usikova, Yu. P. Yakovlev, S. V. Ivanov

Ioffe Institute, St. Petersburg

Abstract: The features of growth of GaInAsSb alloy with In content as high as 25 mol% lattice-matched to GaSb by molecular beam epitaxy are studied. These alloys are promising for use as the active region of photodetector structures of the mid-infrared range. The results of the study of these alloys by double-crystal X-ray diffractometry, scanning electron microscopy, and photoluminescence are presented. It is shown that the Ga$_x$In$_{1-x}$As$_y$Sb$_{1-y}$ alloys with $x <$ 0.8 grown at 500$^\circ$C show the degradation of structural and optical properties as the layer thickness is increased. In layers with thicknesses above the critical one, spinodal decomposition is observed in complete agreement with thermodynamic calculations of the location of the boundaries of immiscibility regions. The possibilities to optimize the molecular beam growth of the Ga$_x$In$_{1-x}$As$_y$Sb$_{1-y}$ alloys ($x <$ 0.75) with high optical and structural quality, as well as the characteristics of photodetectors based on the GaInAsSb/AlGaAsSb heterostructures, are discussed.

Received: 17.09.2009
Accepted: 29.09.2009