I. P. Smirnova, L. K. Markov, E. M. Arakcheeva, A. S. Pavluchenko, D. A. Zakgeim, M. M. Kulagina, “Raising the quantum efficiency of AlGaInN flip-chip LEDs by Reactive ion etching of the outer side of SiC substrates”, Fizika i Tekhnika Poluprovodnikov, 2010, Volume 44, Issue 5,Pages <nobr>684

This article is cited in 3 papers

Semiconductor physics

Raising the quantum efficiency of AlGaInN flip-chip LEDs by Reactive ion etching of the outer side of SiC substrates

I. P. Smirnova^a, L. K. Markov^a, E. M. Arakcheeva^a, A. S. Pavluchenko^ab, D. A. Zakgeim^a, M. M. Kulagina^a

^a Ioffe Institute, St. Petersburg
^b Epitsentr Private Company, St. Petersburg, 194156, Russia

Abstract: A method for creating a light-scattering microprofile on the outer side of SiC substrates in order to diminish the light extraction loss caused by the effect of total internal reflection in light-emitting AlGaIn/GaN structures has been further developed. It is suggested to use thin photoresist layers as random masks for reactive ion etching of silicon carbide substrates. A microprofile with the required parameters has been obtained on the substrate surface by optimizing the etching modes, with the result that the external quantum efficiency of light-emitting crystals increased by more than 25%.

Received: 23.09.2009
Accepted: 29.09.2009