This article is cited in 13 papers

Semiconductor physics

Excess leakage currents in high-voltage 4H-SiC Schottky diodes

P. A. Ivanov, I. V. Grekhov, A. S. Potapov, T. P. Samsonova, N. D. Il'inskaya, O. I. Kon'kov, O. Yu. Serebrennikova

Ioffe Institute, St. Petersburg

Abstract: The high-voltage 4H-SiC Schottky diodes are fabricated with a nickel barrier and a guard system in the form of “floating” planar $p$–$n$ junctions. The analysis of I–V characteristics measured in a wide temperature range shows that the forward current is caused by thermionic emission; however, the current is “excessive” in the reverse direction. It is assumed that the reverse current flows locally through the points of the penetrating-dislocation outcrop to the Ni-SiC interface. The shape of reverse I–V characteristics makes it possible to conclude that the electron transport is governed by the monopolar-injection mechanism (the space-charge limited current) with participation of capture traps.

Received: 21.09.2009
Accepted: 29.09.2009

 English version: Semiconductors, 2010, 44:5, 653–656

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